Laser-induced thermo-chemical etching of ceramics. Etching characteristics in CF4 gas.
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چکیده
منابع مشابه
Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures
The chemical dry etching of silicon nitride (Si3N4)and silicon nitride (SiO2) in a downstream plasma reactor using CF4, O2, and N2 has been investigated. A comparison of the Si3N4 and SiO2 etch rates with that of polycrystalline silicon shows that the etch rates of Si3N4 and SiO2 are not limited by the amount of fluorine arriving on the surface only. Adding N2 in small amounts to a CF4 /O2 micr...
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ژورنال
عنوان ژورنال: Journal of the Japan Society for Precision Engineering
سال: 1988
ISSN: 1882-675X,0912-0289
DOI: 10.2493/jjspe.54.903